\end{cases}Tc(x)=⎩⎨⎧0−0.827429x+0.089718x(lnx−1)+829.418770−0.328481x+0.043109x(lnx−1)−1248.2661210.051162x+0.010441x(lnx−1)−4888.819148235484.5479+0.1862(x−1265000)if x
Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
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Фото: Majid Khahi / ISNA / WANA (West Asia News Agency) via Reuters